features adoption of fbet, mbit processes. low collector-to-emitter saturation voltage. large current capacity. fast switching speed. very small size making it easy to provide highdensity, small-sized hybrid ics. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current i c -5 a collector current (pulse) i cp -8 a collector dissipation p c 1.3 w jumction temperature t j 150 storage temperature t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 2SB1302 product specification 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -20v , i e = 0 -500 na emitter cutoff current i ebo v eb =-4v,i e = 0 -500 na dc current gain h fe v ce =-2v,i c = -500ma 100 400 gain bandwidth product f t v ce =-5v,i c = -200ma 320 mhz output capacitance c ob v cb = -10v , f = 1mhz 60 pf collector-emitter saturation voltage v ce(sat) i c =-3a,i b = -60ma -250 -500 v base-emitter saturation voltage v be(sat) i c =-3a,i b = -60ma -1 -1.3 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -25 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -20 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -5 turn-on time ton 40 ns storage time tstg 200 ns fall time tf 10 ns 2SB1302 h fe classification marking rank r s t hfe 100 200 140 280 200 400 bj sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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